(China (Mainland))
Product Summary
Designed for GSM and EDGE base station applications with frequencies from
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
? GSM and EDGE Performances, Full Frequency Band
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 52% (Typ) @ 90 Watts (CW)
? Internally Matched, Controlled Q, for Ease of Use
? High Gain, High Efficiency and High Linearity
? Integrated ESD Protection
? Designed for Maximum Gain and Insertion Phase Flatness
? Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
? Excellent Thermal Stability
? Characterized with Series Equivalent Large–Signal Impedance Parameters
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF18090A |
Other |
|
Data Sheet |
Negotiable |
|
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|
MRF18090AR3 |
|
IC MOSFET RF N-CHAN NI-880 |
Data Sheet |
|
|
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|
MRF18090AS |
Other |
|
Data Sheet |
Negotiable |
|
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